auf Bestellung 648 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.93 EUR |
| 10+ | 6.6 EUR |
| 100+ | 6.35 EUR |
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Technische Details IXTA36P15P IXYS
Description: MOSFET P-CH 150V 36A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V.
Weitere Produktangebote IXTA36P15P nach Preis ab 5.2 EUR bis 12.11 EUR
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IXTA36P15P | Hersteller : IXYS |
 Description: MOSFET P-CH 150V 36A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V |
auf Bestellung 1242 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA36P15P | Hersteller : Littelfuse |
Trans MOSFET P-CH 150V 36A 3-Pin(2+Tab) D2PAK |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA36P15P | Hersteller : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -36A Power dissipation: 300W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 55nC Reverse recovery time: 228ns |
Produkt ist nicht verfügbar |