IXTA380N036T4-7 IXYS
Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
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Technische Details IXTA380N036T4-7 IXYS
Description: MOSFET N-CH 36V 380A TO263-7, Packaging: Tube, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 380A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7 (IXTA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 36 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V.
Weitere Produktangebote IXTA380N036T4-7
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IXTA380N036T4-7 | Hersteller : IXYS |
Description: MOSFET N-CH 36V 380A TO263-7 Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 380A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 (IXTA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 36 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V |
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IXTA380N036T4-7 | Hersteller : IXYS |
MOSFETs Disc MSFT NChTrenchGate-Gen4 TO-263D2 |
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IXTA380N036T4-7 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 36V Drain current: 380A Power dissipation: 480W Case: TO263-7 On-state resistance: 1mΩ Mounting: SMD Gate charge: 260nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 54ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |