IXTA3N150HV IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Case: TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Reverse recovery time: 900ns
Drain-source voltage: 1.5kV
Drain current: 3A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Case: TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Reverse recovery time: 900ns
Drain-source voltage: 1.5kV
Drain current: 3A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 13.99 EUR |
8+ | 9.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTA3N150HV IXYS
Description: MOSFET N-CH 1500V 3A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V.
Weitere Produktangebote IXTA3N150HV nach Preis ab 9.45 EUR bis 17.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
---|---|---|---|---|---|---|---|---|---|---|---|
IXTA3N150HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns Case: TO263 Mounting: SMD Kind of package: tube Power dissipation: 250W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Gate charge: 38.6nC Kind of channel: enhanced Reverse recovery time: 900ns Drain-source voltage: 1.5kV Drain current: 3A Type of transistor: N-MOSFET |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||
IXTA3N150HV | Hersteller : IXYS | MOSFET MSFT N-CH STD-HI VOLTAGE |
auf Bestellung 336 Stücke: Lieferzeit 459-463 Tag (e) |
|
|||||||
IXTA3N150HV | Hersteller : Littelfuse | Trans MOSFET N-CH 1.5KV 3A 3-Pin(2+Tab) TO-263HV |
Produkt ist nicht verfügbar |
||||||||
IXTA3N150HV | Hersteller : IXYS |
Description: MOSFET N-CH 1500V 3A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V |
Produkt ist nicht verfügbar |