IXTA3N50D2 IXYS
Hersteller: IXYSDescription: MOSFET N-CH 500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 8.01 EUR |
| 10+ | 6.72 EUR |
| 100+ | 5.44 EUR |
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Technische Details IXTA3N50D2 IXYS
Description: MOSFET N-CH 500V 3A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 125W (Tc), Supplier Device Package: TO-263AA, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V.
Weitere Produktangebote IXTA3N50D2 nach Preis ab 5.1 EUR bis 8.13 EUR
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IXTA3N50D2 | Hersteller : IXYS |
MOSFET N-CH MOSFETS (D2) 500V 3A |
auf Bestellung 456 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA3N50D2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK |
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IXTA3N50D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 125W Case: TO263 On-state resistance: 1.5Ω Mounting: SMD Gate charge: 1.07µC Kind of package: tube Kind of channel: depleted Reverse recovery time: 24ns Anzahl je Verpackung: 1 Stücke |
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IXTA3N50D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 125W Case: TO263 On-state resistance: 1.5Ω Mounting: SMD Gate charge: 1.07µC Kind of package: tube Kind of channel: depleted Reverse recovery time: 24ns |
Produkt ist nicht verfügbar |