auf Bestellung 1639 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.88 EUR |
| 10+ | 5.47 EUR |
| 100+ | 5.12 EUR |
| 500+ | 5.03 EUR |
| 1000+ | 4.66 EUR |
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Technische Details IXTA3N50D2 IXYS
Description: MOSFET N-CH 500V 3A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V, Power Dissipation (Max): 125W (Tc), Supplier Device Package: TO-263AA, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V.
Weitere Produktangebote IXTA3N50D2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXTA3N50D2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| IXTA3N50D2 | Hersteller : IXYS |
IXTA3N50D2 SMD N channel transistors |
Produkt ist nicht verfügbar |
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IXTA3N50D2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 3A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V Power Dissipation (Max): 125W (Tc) Supplier Device Package: TO-263AA Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V |
Produkt ist nicht verfügbar |