auf Bestellung 533 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.47 EUR |
| 10+ | 6.97 EUR |
| 100+ | 5.63 EUR |
| 500+ | 5.03 EUR |
| 1000+ | 4.66 EUR |
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Technische Details IXTA3N50D2 IXYS
Description: MOSFET N-CH 500V 3A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V, Power Dissipation (Max): 125W (Tc), Supplier Device Package: TO-263AA, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V.
Weitere Produktangebote IXTA3N50D2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXTA3N50D2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXTA3N50D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO263 On-state resistance: 1.5Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Power dissipation: 125W Gate charge: 1.07µC Reverse recovery time: 24ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA3N50D2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 3A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V Power Dissipation (Max): 125W (Tc) Supplier Device Package: TO-263AA Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTA3N50D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO263 On-state resistance: 1.5Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Power dissipation: 125W Gate charge: 1.07µC Reverse recovery time: 24ns |
Produkt ist nicht verfügbar |