IXTA3N50D2 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.63 EUR |
| 50+ | 6.74 EUR |
| 100+ | 6.16 EUR |
| 500+ | 5.16 EUR |
| 1000+ | 4.84 EUR |
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Technische Details IXTA3N50D2 IXYS
Description: MOSFET N-CH 500V 3A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V, Power Dissipation (Max): 125W (Tc), Supplier Device Package: TO-263AA, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V.
Weitere Produktangebote IXTA3N50D2 nach Preis ab 5.97 EUR bis 13.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXTA3N50D2 | IXYS |
MOSFETs N-CH MOSFETS (D2) 500V 3A |
auf Bestellung 3648 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTA3N50D2 |
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Hersteller: IXYS
MOSFETs N-CH MOSFETS (D2) 500V 3A
MOSFETs N-CH MOSFETS (D2) 500V 3A
auf Bestellung 3648 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.03 EUR |
| 10+ | 7.14 EUR |
| 100+ | 6.33 EUR |
| 500+ | 5.97 EUR |