auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 9.01 EUR |
| 10+ | 7.57 EUR |
| 50+ | 7.32 EUR |
| 100+ | 6.04 EUR |
| 250+ | 5.9 EUR |
| 500+ | 5.39 EUR |
| 1000+ | 4.65 EUR |
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Technische Details IXTA460P2 IXYS
Description: MOSFET N-CH 500V 24A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V.
Weitere Produktangebote IXTA460P2 nach Preis ab 6.3 EUR bis 10.07 EUR
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IXTA460P2 | Hersteller : IXYS |
 Description: MOSFET N-CH 500V 24A TO263Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V |
auf Bestellung 986 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA460P2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns Drain-source voltage: 500V Drain current: 24A Case: TO263 Mounting: SMD Polarisation: unipolar On-state resistance: 0.27Ω Power dissipation: 480W Kind of channel: enhanced Gate charge: 48nC Reverse recovery time: 400ns Kind of package: tube Features of semiconductor devices: standard power mosfet Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA460P2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns Drain-source voltage: 500V Drain current: 24A Case: TO263 Mounting: SMD Polarisation: unipolar On-state resistance: 0.27Ω Power dissipation: 480W Kind of channel: enhanced Gate charge: 48nC Reverse recovery time: 400ns Kind of package: tube Features of semiconductor devices: standard power mosfet Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |