Produkte > IXYS > IXTA48N20T

IXTA48N20T IXYS

Name: IXTA48N20T
Brand: IXYS
SKU: 1995363-3
Price: 4.74 EUR
Availability: InStock

littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_48n20t_datasheet.pdf.pdf

Hersteller: IXYS
Description: MOSFET N-CH 200V 48A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V

auf Bestellung 1050 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
3+	6.97 EUR
10+	5.86 EUR
100+	4.74 EUR

Mindestbestellmenge: 3

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Technische Details IXTA48N20T IXYS

Description: MOSFET N-CH 200V 48A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V.

Weitere Produktangebote IXTA48N20T

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
IXTA48N20T	Hersteller : IXYS	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO263; 130ns Case: TO263 Mounting: SMD Kind of package: tube Polarisation: unipolar Kind of channel: enhanced Power dissipation: 250W Reverse recovery time: 130ns Type of transistor: N-MOSFET Drain-source voltage: 200V Drain current: 48A On-state resistance: 50mΩ Gate charge: 60nC Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke	Produkt ist nicht verfügbar
IXTA48N20T	Hersteller : IXYS	MOSFET 48 Amps 200V 50 Rds	Produkt ist nicht verfügbar
IXTA48N20T	Hersteller : IXYS	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO263; 130ns Case: TO263 Mounting: SMD Kind of package: tube Polarisation: unipolar Kind of channel: enhanced Power dissipation: 250W Reverse recovery time: 130ns Type of transistor: N-MOSFET Drain-source voltage: 200V Drain current: 48A On-state resistance: 50mΩ Gate charge: 60nC Features of semiconductor devices: thrench gate power mosfet	Produkt ist nicht verfügbar