IXTA48P05T IXYS
Hersteller: IXYS
Description: MOSFET P-CH 50V 48A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3+ | 6.74 EUR |
| 50+ | 3.67 EUR |
| 100+ | 3.6 EUR |
| 500+ | 3.25 EUR |
| 1000+ | 3.09 EUR |
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Technische Details IXTA48P05T IXYS
Description: MOSFET P-CH 50V 48A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V.
Weitere Produktangebote IXTA48P05T nach Preis ab 4.29 EUR bis 8.8 EUR
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IXTA48P05T | Hersteller : IXYS |
MOSFETs TenchP Power MOSFET |
auf Bestellung 413 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTA48P05T |
MOSFET P-CH 50V 48A TO263 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IXTA48P05T | Hersteller : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263 Type of transistor: P-MOSFET Drain-source voltage: -50V Drain current: -48A Power dissipation: 150W Case: TO263 Gate-source voltage: ±15V On-state resistance: 30mΩ Mounting: SMD Kind of channel: enhancement Reverse recovery time: 30ns Gate charge: 53nC Technology: TrenchP™ Kind of package: tube Polarisation: unipolar |
Produkt ist nicht verfügbar |