| Anzahl | Preis |
|---|---|
| 1+ | 6.9 EUR |
| 10+ | 4.1 EUR |
| 100+ | 3.36 EUR |
| 500+ | 2.59 EUR |
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Technische Details IXTA4N65X2 IXYS
Description: MOSFET N-CH 650V 4A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V.
Weitere Produktangebote IXTA4N65X2 nach Preis ab 17.88 EUR bis 17.88 EUR
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IXTA4N65X2 | Hersteller : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Power dissipation: 80W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 8.3nC Kind of package: tube Kind of channel: enhancement Technology: X2-Class Reverse recovery time: 160ns |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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