Technische Details IXTA52P10P IXYS
Description: MOSFET P-CH 100V 52A TO263, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 4.5V @ 250µA.
Weitere Produktangebote IXTA52P10P nach Preis ab 6.14 EUR bis 14.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXTA52P10P | Littelfuse Inc. |
 Description: MOSFET P-CH 100V 52A TO263Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 4.5V @ 250µA |
auf Bestellung 1203 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTA52P10P |
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Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 100V 52A TO263
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Description: MOSFET P-CH 100V 52A TO263
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
auf Bestellung 1203 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.33 EUR |
| 50+ | 7.78 EUR |
| 100+ | 7.15 EUR |
| 500+ | 6.14 EUR |