auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.88 EUR |
| 10+ | 2.69 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.94 EUR |
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Technische Details IXTA60N10T IXYS
Description: MOSFET N-CH 100V 60A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V.
Weitere Produktangebote IXTA60N10T nach Preis ab 1.93 EUR bis 4.95 EUR
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IXTA60N10T | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 100V 60A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V |
auf Bestellung 2055 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA60N10T Produktcode: 148376
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Transistoren > MOSFET N-CH |
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IXTA60N10T | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXTA60N10T | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 176W Case: TO263 On-state resistance: 18mΩ Mounting: SMD Gate charge: 49nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 59ns Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA60N10T | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 176W Case: TO263 On-state resistance: 18mΩ Mounting: SMD Gate charge: 49nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 59ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |