IXTA60N10T IXYS
Hersteller: IXYSDescription: MOSFET N-CH 100V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.47 EUR |
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Technische Details IXTA60N10T IXYS
Description: MOSFET N-CH 100V 60A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V.
Weitere Produktangebote IXTA60N10T nach Preis ab 2.27 EUR bis 4.51 EUR
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IXTA60N10T | Hersteller : IXYS |
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auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA60N10T Produktcode: 148376 |
Transistoren > MOSFET N-CH |
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IXTA60N10T | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) D2PAK |
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IXTA60N10T | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO263 Drain current: 60A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 176W Features of semiconductor devices: thrench gate power mosfet Gate charge: 49nC Kind of channel: enhanced Reverse recovery time: 59ns Drain-source voltage: 100V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA60N10T | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO263 Drain current: 60A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 176W Features of semiconductor devices: thrench gate power mosfet Gate charge: 49nC Kind of channel: enhanced Reverse recovery time: 59ns Drain-source voltage: 100V |
Produkt ist nicht verfügbar |