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IXTA60N10T

IXTA60N10T Littelfuse Inc.


littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n10t_datasheet.pdf.pdf Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 2055 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.95 EUR
50+2.69 EUR
100+2.46 EUR
500+2.04 EUR
1000+1.93 EUR
Mindestbestellmenge: 4
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Technische Details IXTA60N10T Littelfuse Inc.

Description: MOSFET N-CH 100V 60A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V.

Weitere Produktangebote IXTA60N10T nach Preis ab 2.11 EUR bis 5.07 EUR

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IXTA60N10T IXTA60N10T Hersteller : IXYS media-3322180.pdf MOSFETs 60 Amps 100V 18.0 Rds
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.07 EUR
10+4.88 EUR
50+2.90 EUR
100+2.78 EUR
250+2.71 EUR
500+2.20 EUR
1000+2.11 EUR
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IXTA60N10T
Produktcode: 148376
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littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n10t_datasheet.pdf.pdf Transistoren > MOSFET N-CH
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IXTA60N10T IXTA60N10T Hersteller : Littelfuse e_mosfets_n-channel_trench_gate_ixt_60n10t_datasheet.pdf.pdf Trans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) D2PAK
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IXTA60N10T IXTA60N10T Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXTA60N10T IXTA60N10T Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH