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IXTA60N20T

IXTA60N20T IXYS

IXTA(P,Q)60N20T.pdf Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhanced
Reverse recovery time: 118ns
Drain-source voltage: 200V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.93 EUR
14+ 5.11 EUR
Mindestbestellmenge: 13
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Technische Details IXTA60N20T IXYS

Description: MOSFET N-CH 200V 60A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V.

Weitere Produktangebote IXTA60N20T nach Preis ab 5.11 EUR bis 5.93 EUR

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IXTA60N20T IXTA60N20T Hersteller : IXYS IXTA(P,Q)60N20T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhanced
Reverse recovery time: 118ns
Drain-source voltage: 200V
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
13+5.93 EUR
14+ 5.11 EUR
Mindestbestellmenge: 13
IXTA60N20T IXTA60N20T
Produktcode: 108659 		Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n20t_datasheet.pdf.pdf Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXTA60N20T IXTA60N20T Hersteller : Littelfuse e_mosfets_n-channel_trench_gate_ixt_60n20t_datasheet.pdf.pdf Trans MOSFET N-CH 200V 60A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA60N20T IXTA60N20T Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
Produkt ist nicht verfügbar
IXTA60N20T IXTA60N20T Hersteller : IXYS media-3322086.pdf MOSFET 60 Amps 200V
Produkt ist nicht verfügbar