auf Bestellung 963 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 21.58 EUR |
| 10+ | 19.45 EUR |
| 25+ | 18.62 EUR |
| 50+ | 17.95 EUR |
| 100+ | 16.81 EUR |
| 250+ | 16.49 EUR |
| 500+ | 15.45 EUR |
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Technische Details IXTA64N10L2 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 64A, Power dissipation: 357W, Case: TO263, On-state resistance: 32mΩ, Mounting: SMD, Gate charge: 0.1µC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: linear power mosfet, Reverse recovery time: 180ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTA64N10L2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IXTA64N10L2 | Hersteller : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 64A Power dissipation: 357W Case: TO263 On-state resistance: 32mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 180ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA64N10L2 | Hersteller : IXYS |
Description: MOSFET N-CH 100V 64A TO263AA |
Produkt ist nicht verfügbar |
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IXTA64N10L2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 64A Power dissipation: 357W Case: TO263 On-state resistance: 32mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 180ns |
Produkt ist nicht verfügbar |