auf Bestellung 1137 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 16.30 EUR |
| 10+ | 14.40 EUR |
| 50+ | 10.54 EUR |
| 500+ | 9.79 EUR |
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Technische Details IXTA6N100D2 IXYS
Description: MOSFET N-CH 1000V 6A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V, Power Dissipation (Max): 300W (Tc), Supplier Device Package: TO-263AA, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V.
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IXTA6N100D2 | Hersteller : Littelfuse |
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IXTA6N100D2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 6A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-263AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V |
Produkt ist nicht verfügbar |