IXTA6N100D2HV IXYS
Hersteller: IXYSDescription: MOSFET N-CH 1000V 6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 300+ | 13.4 EUR |
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Technische Details IXTA6N100D2HV IXYS
Description: MOSFET N-CH 1000V 6A TO263HV, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 6A (Tj), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V.
Weitere Produktangebote IXTA6N100D2HV nach Preis ab 16.17 EUR bis 25.01 EUR
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IXTA6N100D2HV | Hersteller : IXYS |
MOSFETs TO263 1KV 6A N-CH DEPL |
auf Bestellung 695 Stücke: Lieferzeit 10-14 Tag (e) |
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