IXTA6N50D2 IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
| Anzahl | Privatkunde |
|---|---|
| 7+ | 14.02 EUR |
| 10+ | 11.79 EUR |
| 25+ | 9.9 EUR |
| 50+ | 9.12 EUR |
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Technische Details IXTA6N50D2 IXYS
Description: MOSFET N-CH 500V 6A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V, Power Dissipation (Max): 300W (Tc), Supplier Device Package: TO-263AA, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V.
Weitere Produktangebote IXTA6N50D2 nach Preis ab 10.26 EUR bis 22.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IXTA6N50D2 | IXYS |
MOSFETs N-CH MOSFETS (D2) 500V 6A |
auf Bestellung 754 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA6N50D2 | IXYS |
Description: MOSFET N-CH 500V 6A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-263AA Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V |
auf Bestellung 1441 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTA6N50D2 |
|
Hersteller: IXYS
MOSFETs N-CH MOSFETS (D2) 500V 6A
MOSFETs N-CH MOSFETS (D2) 500V 6A
auf Bestellung 754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.74 EUR |
| 10+ | 12.63 EUR |
| 100+ | 12.17 EUR |
| IXTA6N50D2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Description: MOSFET N-CH 500V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 1441 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.76 EUR |
| 10+ | 15.8 EUR |
| 50+ | 12.82 EUR |
| 100+ | 11.86 EUR |
| 500+ | 10.26 EUR |