IXTA70N075T2 IXYS
Hersteller: IXYSDescription: MOSFET N-CH 75V 70A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
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Technische Details IXTA70N075T2 IXYS
Description: MOSFET N-CH 75V 70A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTA70N075T2 | Hersteller : IXYS |
MOSFET 70 Amps 75V 0.0120 Rds |
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IXTA70N075T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Power dissipation: 150W Case: TO263 On-state resistance: 12mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Gate charge: 46nC Reverse recovery time: 48ns |
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