auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.1 EUR |
| 10+ | 5.09 EUR |
Produktrezensionen
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Technische Details IXTA75N10P IXYS
Description: MOSFET N-CH 100V 75A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V.
Weitere Produktangebote IXTA75N10P nach Preis ab 4.03 EUR bis 8.66 EUR
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IXTA75N10P | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 100V 75A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
auf Bestellung 844 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA75N10P | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK |
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IXTA75N10P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 74nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns Technology: PolarHT™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA75N10P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 74nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns Technology: PolarHT™ |
Produkt ist nicht verfügbar |