IXTA76P10T
Produktcode: 198462
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote IXTA76P10T nach Preis ab 4.69 EUR bis 14.48 EUR
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IXTA76P10T | Hersteller : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263 Mounting: SMD Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -76A Gate-source voltage: ±15V Gate charge: 197nC Reverse recovery time: 70ns On-state resistance: 25mΩ Power dissipation: 298W Kind of package: tube Case: TO263 Kind of channel: enhancement |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA76P10T | Hersteller : IXYS |
Description: MOSFET P-CH 100V 76A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V |
auf Bestellung 359 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA76P10T | Hersteller : IXYS |
MOSFETs -76 Amps -100V 0.024 Rds |
auf Bestellung 1196 Stücke: Lieferzeit 10-14 Tag (e) |
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