IXTA80N12T2 IXYS
Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Mounting: SMD
On-state resistance: 17mΩ
Reverse recovery time: 90ns
Power dissipation: 325W
Gate charge: 80nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
Anzahl je Verpackung: 1 Stücke
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Technische Details IXTA80N12T2 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns, Mounting: SMD, On-state resistance: 17mΩ, Reverse recovery time: 90ns, Power dissipation: 325W, Gate charge: 80nC, Polarisation: unipolar, Features of semiconductor devices: thrench gate power mosfet, Drain current: 80A, Kind of channel: enhanced, Drain-source voltage: 120V, Type of transistor: N-MOSFET, Kind of package: tube, Case: TO263, Anzahl je Verpackung: 1 Stücke.
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IXTA80N12T2 | Hersteller : IXYS |
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IXTA80N12T2 | Hersteller : IXYS |
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IXTA80N12T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns Mounting: SMD On-state resistance: 17mΩ Reverse recovery time: 90ns Power dissipation: 325W Gate charge: 80nC Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 80A Kind of channel: enhanced Drain-source voltage: 120V Type of transistor: N-MOSFET Kind of package: tube Case: TO263 |
Produkt ist nicht verfügbar |