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IXTA80N12T2 IXYS


Hersteller: IXYS
IXTA80N12T2 SMD N channel transistors
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Technische Details IXTA80N12T2 IXYS

Description: MOSFET N-CH 120V 80A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 40A, 10V, Power Dissipation (Max): 325W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V.

Weitere Produktangebote IXTA80N12T2

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IXTA80N12T2 IXTA80N12T2 Hersteller : Littelfuse Inc. Description: MOSFET N-CH 120V 80A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 40A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V
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IXTA80N12T2 IXTA80N12T2 Hersteller : IXYS media-3319433.pdf MOSFETs TrenchT2 MOSFETs Power MOSFETs
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