Technische Details IXTB30N100L Littelfuse
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us, Mounting: THT, Polarisation: unipolar, Kind of package: tube, Case: PLUS264™, Gate charge: 545nC, Kind of channel: enhanced, Reverse recovery time: 1µs, Drain-source voltage: 1kV, Drain current: 30A, On-state resistance: 0.45Ω, Type of transistor: N-MOSFET, Power dissipation: 800W, Features of semiconductor devices: linear power mosfet, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTB30N100L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IXTB30N100L | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us Mounting: THT Polarisation: unipolar Kind of package: tube Case: PLUS264™ Gate charge: 545nC Kind of channel: enhanced Reverse recovery time: 1µs Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 800W Features of semiconductor devices: linear power mosfet Anzahl je Verpackung: 1 Stücke |
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IXTB30N100L | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 30A PLUS264 |
Produkt ist nicht verfügbar |
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IXTB30N100L | Hersteller : IXYS |
MOSFET 30 Amps 1000V |
Produkt ist nicht verfügbar |
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| IXTB30N100L | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us Mounting: THT Polarisation: unipolar Kind of package: tube Case: PLUS264™ Gate charge: 545nC Kind of channel: enhanced Reverse recovery time: 1µs Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 800W Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |