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IXTB30N100L

IXTB30N100L Littelfuse Inc.

littelfuse_discrete_mosfets_n-channel_linear_ixtb30n100l_datasheet.pdf.pdf
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 30A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
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Technische Details IXTB30N100L Littelfuse Inc.

Description: MOSFET N-CH 1000V 30A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 20V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PLUS264™, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V.

Weitere Produktangebote IXTB30N100L

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IXTB30N100L IXTB30N100L IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Linear_IXTB30N100L_Datasheet.PDF MOSFETs 30 Amps 1000V
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IXTB30N100L IXYS IXTB30N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 545nC
Features of semiconductor devices: linear power mosfet
Kind of package: tube
Reverse recovery time: 1µs
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IXTB30N100L Littelfuse_Discrete_MOSFETs_N_Channel_Linear_IXTB30N100L_Datasheet.PDF
IXTB30N100L
Hersteller: IXYS
MOSFETs 30 Amps 1000V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTB30N100L IXTB30N100L.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 545nC
Features of semiconductor devices: linear power mosfet
Kind of package: tube
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH