Technische Details IXTB30N100L Littelfuse
Description: MOSFET N-CH 1000V 30A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 20V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PLUS264™, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V.
Weitere Produktangebote IXTB30N100L
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXTB30N100L | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Power dissipation: 800W Case: PLUS264™ On-state resistance: 0.45Ω Mounting: THT Gate charge: 545nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 1µs Features of semiconductor devices: linear power mosfet Anzahl je Verpackung: 1 Stücke |
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IXTB30N100L | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 30A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 20V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTB30N100L | Hersteller : IXYS |
MOSFETs 30 Amps 1000V |
Produkt ist nicht verfügbar |
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| IXTB30N100L | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Power dissipation: 800W Case: PLUS264™ On-state resistance: 0.45Ω Mounting: THT Gate charge: 545nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 1µs Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |