auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 92.51 EUR |
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Technische Details IXTB62N50L IXYS
Description: MOSFET N-CH 500V 62A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V.
Weitere Produktangebote IXTB62N50L nach Preis ab 63.78 EUR bis 97.12 EUR
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IXTB62N50L | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 500V 62A PLUS264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTB62N50L | Hersteller : IXYS |
IXTB62N50L THT N channel transistors |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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