IXTB62N50L IXYS
Hersteller: IXYS
Description: MOSFET N-CH 500V 62A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 102.48 EUR |
| 25+ | 75.58 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
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Technische Details IXTB62N50L IXYS
Description: MOSFET N-CH 500V 62A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V.
Weitere Produktangebote IXTB62N50L nach Preis ab 106.98 EUR bis 117.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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IXTB62N50L | IXYS |
MOSFETs 62 Amps 500V 0.1 Rds |
auf Bestellung 498 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTB62N50L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 62A Power dissipation: 800W Case: PLUS264™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 550nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTB62N50L |
|
Hersteller: IXYS
MOSFETs 62 Amps 500V 0.1 Rds
MOSFETs 62 Amps 500V 0.1 Rds
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 117.04 EUR |
| 10+ | 106.98 EUR |
| IXTB62N50L |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)