IXTC160N10T IXYS
Hersteller: IXYS
Description: MOSFET N-CH 100V 83A ISOPLUS220
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
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Technische Details IXTC160N10T IXYS
Description: MOSFET N-CH 100V 83A ISOPLUS220, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: ISOPLUS220™, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 140W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 83A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: ISOPLUS220™, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V.