IXTF02N450

Hersteller: IXYS
MOSFETs 4500V 200mA HV Power MOSFET

Hersteller: IXYS
Description: MOSFET N-CH 4500V 200MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V

Hersteller: LITTELFUSE
Description: LITTELFUSE - IXTF02N450 - Leistungs-MOSFET, n-Kanal, 4.5 kV, 200 mA, 750 ohm, ISOPLUS i4-PAK, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 4.5kV
rohsCompliant: YES
Dauer-Drainstrom Id: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 78W
Bauform - Transistor: ISOPLUS i4-PAK
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: -
Betriebstemperatur, max.: -
Drain-Source-Durchgangswiderstand: 750ohm
SVHC: To Be Advised