auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 133.87 EUR |
| 10+ | 124.89 EUR |
| 25+ | 114.29 EUR |
| 250+ | 113.77 EUR |
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Technische Details IXTF1R4N450 IXYS
Description: MOSFET N-CH 4500V 1.4A I4PAC, Packaging: Tube, Package / Case: i4-Pac™-5 (3 Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 6V @ 250µA, Supplier Device Package: ISOPLUS i4-PAC™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 4500 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V.
Weitere Produktangebote IXTF1R4N450
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IXTF1R4N450 | Hersteller : IXYS | IXTF1R4N450 THT N channel transistors |
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IXTF1R4N450 | Hersteller : IXYS |
Description: MOSFET N-CH 4500V 1.4A I4PAC Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 6V @ 250µA Supplier Device Package: ISOPLUS i4-PAC™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 4500 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
Produkt ist nicht verfügbar |