auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 39.97 EUR |
| 10+ | 30.85 EUR |
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Technische Details IXTH04N300P3HV IXYS
Description: MOSFET N-CH 3000V 400MA TO247HV, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Tc), Rds On (Max) @ Id, Vgs: 190Ohm @ 200mA, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 3000 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 25 V.
Weitere Produktangebote IXTH04N300P3HV
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IXTH04N300P3HV | Hersteller : Littelfuse |
 N-Channel Enhancement Mode Power MOSFET |
Produkt ist nicht verfügbar |
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IXTH04N300P3HV | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us Reverse recovery time: 1.1µs Drain-source voltage: 3kV Drain current: 0.4A On-state resistance: 190Ω Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 13nC Kind of channel: enhancement Mounting: THT Case: TO247HV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTH04N300P3HV | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 3000V 400MA TO247HV Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 190Ohm @ 200mA, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 3000 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTH04N300P3HV | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us Reverse recovery time: 1.1µs Drain-source voltage: 3kV Drain current: 0.4A On-state resistance: 190Ω Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 13nC Kind of channel: enhancement Mounting: THT Case: TO247HV |
Produkt ist nicht verfügbar |