auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 17.43 EUR |
| 12+ | 13.2 EUR |
| 25+ | 12.71 EUR |
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Technische Details IXTH10P60 Littelfuse
Description: MOSFET P-CH 600V 10A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V.
Weitere Produktangebote IXTH10P60 nach Preis ab 14.08 EUR bis 30.26 EUR
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IXTH10P60 | Hersteller : IXYS |
 Description: MOSFET P-CH 600V 10A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V |
auf Bestellung 276 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH10P60 | Hersteller : IXYS |
MOSFET -10 Amps -600V 1 Rds |
auf Bestellung 1 Stücke: Lieferzeit 14-28 Tag (e) |
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IXTH10P60 | Hersteller : Littelfuse |
Trans MOSFET P-CH Si 600V 10A 3-Pin(3+Tab) TO-247AD |
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IXTH10P60 | Hersteller : Littelfuse |
Trans MOSFET P-CH Si 600V 10A 3-Pin(3+Tab) TO-247AD |
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IXTH10P60 | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns Mounting: THT Reverse recovery time: 0.5µs Case: TO247-3 Kind of package: tube Power dissipation: 300W Polarisation: unipolar Gate charge: 135nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -600V Drain current: -10A On-state resistance: 1Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
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IXTH10P60 | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns Mounting: THT Reverse recovery time: 0.5µs Case: TO247-3 Kind of package: tube Power dissipation: 300W Polarisation: unipolar Gate charge: 135nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -600V Drain current: -10A On-state resistance: 1Ω Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |