IXTH110N10L2 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 100V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 35.88 EUR |
| 30+ | 22.57 EUR |
| 120+ | 20.33 EUR |
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Technische Details IXTH110N10L2 IXYS
Description: MOSFET N-CH 100V 110A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V.
Weitere Produktangebote IXTH110N10L2 nach Preis ab 28.66 EUR bis 40.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXTH110N10L2 | IXYS |
MOSFETs L2 Linear Power MOSFET |
auf Bestellung 534 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTH110N10L2 |
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Hersteller: IXYS
MOSFETs L2 Linear Power MOSFET
MOSFETs L2 Linear Power MOSFET
auf Bestellung 534 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 40.46 EUR |
| 10+ | 33.13 EUR |
| 120+ | 28.94 EUR |
| 510+ | 28.66 EUR |