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| 10+ | 42.41 EUR |
| 120+ | 38.09 EUR |
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Technische Details IXTH140N075L2 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 75V, Drain current: 140A, Power dissipation: 540W, Case: TO247-3, On-state resistance: 11mΩ, Mounting: THT, Gate charge: 275nC, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 200ns, Features of semiconductor devices: linear power mosfet.
Weitere Produktangebote IXTH140N075L2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
IXTH140N075L2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 540W Case: TO247-3 On-state resistance: 11mΩ Mounting: THT Gate charge: 275nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTH140N075L2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



