IXTH16N10D2

MOSFET N-CH 100V 16A TO247 Транзистори

Hersteller: IXYS
Description: MOSFET N-CH 100V 16A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

Hersteller: IXYS
MOSFETs N-CH 100V 16A MOSFET