IXTH16N10D2 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 940ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
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Technische Details IXTH16N10D2 IXYS
Description: MOSFET N-CH 100V 16A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V, Power Dissipation (Max): 830W (Tc), Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V.
Weitere Produktangebote IXTH16N10D2 nach Preis ab 71.5 EUR bis 71.5 EUR
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IXTH16N10D2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 830W Case: TO247-3 On-state resistance: 64mΩ Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 940ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTH16N10D2 Produktcode: 79258
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IXTH16N10D2 | Hersteller : IXYS |
Description: MOSFET N-CH 100V 16A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V Power Dissipation (Max): 830W (Tc) Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V |
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