auf Bestellung 952 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 30.11 EUR |
| 10+ | 20.82 EUR |
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Technische Details IXTH1N170DHV IXYS
Description: MOSFET N-CH 1700V 1A TO247HV, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 1A (Tj), Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247HV, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V.
Weitere Produktangebote IXTH1N170DHV nach Preis ab 17.13 EUR bis 30.31 EUR
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IXTH1N170DHV | Hersteller : IXYS |
 Description: MOSFET N-CH 1700V 1A TO247HVPackaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247HV Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V |
auf Bestellung 773 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH1N170DHV | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns Case: TO247HV Mounting: THT Kind of package: tube Polarisation: unipolar Drain current: 1A Drain-source voltage: 1.7kV Reverse recovery time: 30ns On-state resistance: 16Ω Power dissipation: 290W Kind of channel: depletion Type of transistor: N-MOSFET |
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