auf Bestellung 1318 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 29.29 EUR |
| 10+ | 25.12 EUR |
| 30+ | 20.75 EUR |
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Technische Details IXTH1N170DHV IXYS
Description: MOSFET N-CH 1700V 1A TO247HV, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tj), Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V.
Weitere Produktangebote IXTH1N170DHV nach Preis ab 23 EUR bis 29.64 EUR
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IXTH1N170DHV | Hersteller : IXYS |
 Description: MOSFET N-CH 1700V 1A TO247HVPackaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTH1N170DHV | Hersteller : IXYS |
IXTH1N170DHV THT N channel transistors |
Produkt ist nicht verfügbar |