
auf Bestellung 1618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 13.68 EUR |
10+ | 13.27 EUR |
30+ | 8.52 EUR |
120+ | 8.18 EUR |
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Technische Details IXTH1N200P3 IXYS
Description: MOSFET N-CH 2000V 1A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V.
Weitere Produktangebote IXTH1N200P3 nach Preis ab 8.14 EUR bis 16.30 EUR
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IXTH1N200P3 | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 2000 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V |
auf Bestellung 415 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH1N200P3 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTH1N200P3 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTH1N200P3 | Hersteller : IXYS |
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Produkt ist nicht verfügbar |