auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 14.03 EUR |
| 25+ | 12.91 EUR |
| 50+ | 11.93 EUR |
| 100+ | 11.07 EUR |
| 250+ | 10.29 EUR |
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Technische Details IXTH1N200P3HV Littelfuse
Description: MOSFET N-CH 2000V 1A TO247HV, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V.
Weitere Produktangebote IXTH1N200P3HV nach Preis ab 8.61 EUR bis 15.73 EUR
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IXTH1N200P3HV | Hersteller : IXYS |
 MOSFETs 2000V/1A HV Power MOSFET, TO-247HV |
auf Bestellung 104 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH1N200P3HV | Hersteller : IXYS |
Description: MOSFET N-CH 2000V 1A TO247HV Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 2000 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTH1N200P3HV | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 1A Power dissipation: 125W Case: TO247HV On-state resistance: 40Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.3µs |
Produkt ist nicht verfügbar |