auf Bestellung 452 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 52.92 EUR |
| 10+ | 47.31 EUR |
| 120+ | 45.18 EUR |
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Technische Details IXTH1N300P3HV IXYS
Description: MOSFET N-CH 3000V 1A TO247HV, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 3000 V, Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 25 V.
Weitere Produktangebote IXTH1N300P3HV nach Preis ab 58.84 EUR bis 58.84 EUR
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IXTH1N300P3HV | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 3000V 1A TO247HVPackaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 3000 V Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 25 V |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH1N300P3HV | Hersteller : Littelfuse |
Trans MOSFET N-CH 3KV 1A |
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IXTH1N300P3HV | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us Kind of package: tube Polarisation: unipolar Reverse recovery time: 1.8µs On-state resistance: 50Ω Drain current: 1A Drain-source voltage: 3kV Power dissipation: 195W Case: TO247HV Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Anzahl je Verpackung: 1 Stücke |
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IXTH1N300P3HV | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us Kind of package: tube Polarisation: unipolar Reverse recovery time: 1.8µs On-state resistance: 50Ω Drain current: 1A Drain-source voltage: 3kV Power dissipation: 195W Case: TO247HV Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |