| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.55 EUR |
| 10+ | 15.58 EUR |
| 120+ | 12.96 EUR |
| 510+ | 11.57 EUR |
| 1020+ | 10.97 EUR |
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10-14 Tag (e)
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Technische Details IXTH20N65X IXYS
Description: MOSFET N-CH 650V 20A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V, Power Dissipation (Max): 320W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V.
Weitere Produktangebote IXTH20N65X nach Preis ab 14.35 EUR bis 21.72 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXTH20N65X | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns Type of transistor: N-MOSFET Power dissipation: 320W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: ultra junction x-class Drain current: 20A Kind of channel: enhancement Drain-source voltage: 650V On-state resistance: 0.21Ω Reverse recovery time: 0.35µs Gate charge: 35nC Polarisation: unipolar |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXTH20N65X | Ixys Corporation |
IXTH20N65X |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IXTH20N65X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH20N65X |
|
Hersteller: Ixys Corporation
IXTH20N65X
IXTH20N65X
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 21.72 EUR |
| 10+ | 19.03 EUR |
| 30+ | 16.93 EUR |
| 120+ | 14.35 EUR |