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IXTH20N65X

IXTH20N65X IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD2A7F09703820&compId=IXTA(H%2CP)20N65X.pdf?ci_sign=4952fc09840b76b0ed77995751d2310b9fd86f2c Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 254 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.40 EUR
10+7.24 EUR
270+7.06 EUR
510+6.95 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTH20N65X IXYS

Description: MOSFET N-CH 650V 20A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V, Power Dissipation (Max): 320W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V.

Weitere Produktangebote IXTH20N65X nach Preis ab 7.24 EUR bis 16.90 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTH20N65X IXTH20N65X Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD2A7F09703820&compId=IXTA(H%2CP)20N65X.pdf?ci_sign=4952fc09840b76b0ed77995751d2310b9fd86f2c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.40 EUR
10+7.24 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTH20N65X IXTH20N65X Hersteller : IXYS media-3323101.pdf MOSFETs 650V/9A Power MOSFET
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+16.90 EUR
10+14.47 EUR
120+12.04 EUR
270+11.33 EUR
510+10.63 EUR
1020+9.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTH20N65X IXTH20N65X Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
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IXTH20N65X IXTH20N65X Hersteller : IXYS littelfuse-discrete-mosfets-ixt-20n65x-datasheet?assetguid=cee0c26e-5e98-4819-97b9-2a9c31098807 Description: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH