IXTH20N65X IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Reverse recovery time: 0.35µs
| Anzahl | Preis |
|---|---|
| 7+ | 10.4 EUR |
| 10+ | 9.24 EUR |
| 30+ | 8.54 EUR |
| 120+ | 7.62 EUR |
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Technische Details IXTH20N65X IXYS
Description: MOSFET N-CH 650V 20A TO247, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247 (IXTH), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Power Dissipation (Max): 320W (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V.
Weitere Produktangebote IXTH20N65X nach Preis ab 9.22 EUR bis 17.27 EUR
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IXTH20N65X | Hersteller : IXYS |
MOSFETs 650V/9A Power MOSFET |
auf Bestellung 265 Stücke: Lieferzeit 10-14 Tag (e) |
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