auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.82 EUR |
| 10+ | 6.79 EUR |
| 120+ | 6.67 EUR |
| 510+ | 5.67 EUR |
| 1020+ | 5.56 EUR |
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Technische Details IXTH22N50P IXYS
Description: MOSFET N-CH 500V 22A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V, Power Dissipation (Max): 350W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V.
Weitere Produktangebote IXTH22N50P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXTH22N50P | Hersteller : Littelfuse |
 Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXTH22N50P | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXTH22N50P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO247-3 On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTH22N50P | Hersteller : IXYS |
Description: MOSFET N-CH 500V 22A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTH22N50P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO247-3 On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |