auf Bestellung 144 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.19 EUR |
| 10+ | 13.06 EUR |
| 30+ | 8.52 EUR |
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Technische Details IXTH26N60P IXYS
Description: MOSFET N-CH 600V 26A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V.
Weitere Produktangebote IXTH26N60P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXTH26N60P | Hersteller : Littelfuse |
 Trans MOSFET N-CH 600V 26A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXTH26N60P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns Reverse recovery time: 0.5µs Drain-source voltage: 600V Drain current: 26A On-state resistance: 0.27Ω Type of transistor: N-MOSFET Power dissipation: 460W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 72nC Kind of channel: enhancement Mounting: THT Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTH26N60P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 600V 26A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTH26N60P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns Reverse recovery time: 0.5µs Drain-source voltage: 600V Drain current: 26A On-state resistance: 0.27Ω Type of transistor: N-MOSFET Power dissipation: 460W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 72nC Kind of channel: enhancement Mounting: THT Case: TO247-3 |
Produkt ist nicht verfügbar |