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IXTH26P20P

IXTH26P20P IXYS


IX%28T%2CH%2CP%2CQ%29A26P20P.pdf Hersteller: IXYS
Description: MOSFET P-CH 200V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
auf Bestellung 187 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.30 EUR
30+6.94 EUR
120+5.91 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTH26P20P IXYS

Description: MOSFET P-CH 200V 26A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V.

Weitere Produktangebote IXTH26P20P nach Preis ab 6.09 EUR bis 11.48 EUR

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IXTH26P20P IXTH26P20P Hersteller : IXYS media-3319716.pdf MOSFETs -26.0 Amps -200V 0.170 Rds
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.48 EUR
10+10.47 EUR
30+7.16 EUR
120+6.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTH26P20P IXTH26P20P Hersteller : Littelfuse fuse_discrete_mosfets_p-channel_ixt_26p20p_datasheet.pdf.pdf Trans MOSFET P-CH 200V 26A 3-Pin(3+Tab) TO-247
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IXTH26P20P IXTH26P20P Hersteller : Littelfuse ttelfuse_discrete_mosfets_p-channel_ixt_26p20p_datasheet.pdf Trans MOSFET P-CH 200V 26A 3-Pin(3+Tab) TO-247
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IXTH26P20P IXTH26P20P Hersteller : Littelfuse ttelfuse_discrete_mosfets_p-channel_ixt_26p20p_datasheet.pdf Trans MOSFET P-CH 200V 26A 3-Pin(3+Tab) TO-247
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IXTH26P20P IXTH26P20P Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
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IXTH26P20P IXTH26P20P Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH