
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 10.86 EUR |
10+ | 9.91 EUR |
30+ | 6.78 EUR |
120+ | 5.77 EUR |
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Technische Details IXTH26P20P IXYS
Description: MOSFET P-CH 200V 26A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V.
Weitere Produktangebote IXTH26P20P nach Preis ab 5.91 EUR bis 11.3 EUR
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IXTH26P20P | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V |
auf Bestellung 187 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH26P20P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTH26P20P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTH26P20P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTH26P20P | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 56nC Technology: PolarP™ Kind of channel: enhancement Gate-source voltage: ±20V Reverse recovery time: 240ns Drain-source voltage: -200V Drain current: -26A On-state resistance: 0.17Ω Type of transistor: P-MOSFET Power dissipation: 300W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTH26P20P | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 56nC Technology: PolarP™ Kind of channel: enhancement Gate-source voltage: ±20V Reverse recovery time: 240ns Drain-source voltage: -200V Drain current: -26A On-state resistance: 0.17Ω Type of transistor: P-MOSFET Power dissipation: 300W Polarisation: unipolar |
Produkt ist nicht verfügbar |