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IXTH30N50P IXYS


Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT_30N50P_Datasheet.PDF
Hersteller: IXYS
MOSFETs 30.0 Amps 500 V 0.2 Ohm Rds
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.8 EUR
10+13.51 EUR
120+11.52 EUR
510+11.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTH30N50P IXYS

Description: MOSFET N-CH 500V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V.

Weitere Produktangebote IXTH30N50P nach Preis ab 11.22 EUR bis 22.05 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IXTH30N50P IXTH30N50P IXYS media?resourcetype=datasheets&itemid=FFA26B35-B54D-41D6-9A95-DC29A86831F6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-30N50P-Datasheet.PDF Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.05 EUR
30+13.17 EUR
120+11.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTH30N50P media?resourcetype=datasheets&itemid=FFA26B35-B54D-41D6-9A95-DC29A86831F6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-30N50P-Datasheet.PDF
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.05 EUR
30+13.17 EUR
120+11.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH