auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 32.42 EUR |
| 30+ | 27.24 EUR |
| 60+ | 26.26 EUR |
| 120+ | 24.71 EUR |
| 270+ | 23.48 EUR |
| 510+ | 22.28 EUR |
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Technische Details IXTH30N60L2 IXYS
Description: MOSFET N-CH 600V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V.
Weitere Produktangebote IXTH30N60L2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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IXTH30N60L2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXTH30N60L2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Gate charge: 335nC Kind of channel: enhanced Reverse recovery time: 710ns Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 540W Features of semiconductor devices: linear power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTH30N60L2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXTH30N60L2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 600V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTH30N60L2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Gate charge: 335nC Kind of channel: enhanced Reverse recovery time: 710ns Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 540W Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |