IXTH30N60P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 285 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 13.1 EUR |
| 8+ | 9.38 EUR |
| 9+ | 8.88 EUR |
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Technische Details IXTH30N60P IXYS
Description: MOSFET N-CH 600V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V.
Weitere Produktangebote IXTH30N60P nach Preis ab 8.88 EUR bis 17.81 EUR
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IXTH30N60P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns Reverse recovery time: 0.5µs Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 540W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 82nC Kind of channel: enhancement Mounting: THT Case: TO247-3 |
auf Bestellung 285 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH30N60P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 600V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V |
auf Bestellung 387 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH30N60P | Hersteller : IXYS |
MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds |
auf Bestellung 410 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH30N60P | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXTH30N60P | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |