| Anzahl | Privatkunde |
|---|---|
| 30+ | 15.91 EUR |
| 60+ | 15.27 EUR |
| 120+ | 14.14 EUR |
| 270+ | 13.45 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
30 Stücke
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Technische Details IXTH30N60P Littelfuse
Description: MOSFET N-CH 600V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V.
Weitere Produktangebote IXTH30N60P nach Preis ab 12.82 EUR bis 24.8 EUR
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IXTH30N60P | Ixys Corporation |
 Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247AD |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH30N60P | IXYS |
MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds |
auf Bestellung 224 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH30N60P | IXYS |
Description: MOSFET N-CH 600V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH30N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.24Ω Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Features of semiconductor devices: standard power mosfet |
auf Bestellung 243 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTH30N60P |
|
Hersteller: Ixys Corporation
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247AD
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247AD
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 19.8 EUR |
| 11+ | 17.48 EUR |
| 30+ | 16.43 EUR |
| IXTH30N60P |
|
Hersteller: IXYS
MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds
MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.3 EUR |
| 10+ | 13.55 EUR |
| IXTH30N60P |
|
Hersteller: IXYS
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.8 EUR |
| 30+ | 14.97 EUR |
| 60+ | 13.79 EUR |
| 120+ | 12.82 EUR |
| IXTH30N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)