IXTH32N65X IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 169 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 9.12 EUR |
| 11+ | 6.54 EUR |
| 12+ | 6.18 EUR |
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Technische Details IXTH32N65X IXYS
Description: MOSFET N-CH 650V 32A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V.
Weitere Produktangebote IXTH32N65X nach Preis ab 6.18 EUR bis 9.12 EUR
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IXTH32N65X | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Power dissipation: 500W Case: TO247-3 On-state resistance: 135mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Features of semiconductor devices: ultra junction x-class |
auf Bestellung 169 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH32N65X | Hersteller : IXYS |
Description: MOSFET N-CH 650V 32A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V |
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IXTH32N65X | Hersteller : IXYS |
MOSFETs 650v/32A Power MOSFET |
Produkt ist nicht verfügbar |