
IXTH32P20T Littelfuse Inc.

Description: MOSFET P-CH 200V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
auf Bestellung 1170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
300+ | 9.13 EUR |
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Technische Details IXTH32P20T Littelfuse Inc.
Description: MOSFET P-CH 200V 32A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V.
Weitere Produktangebote IXTH32P20T
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Verfügbarkeit |
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IXTH32P20T | Hersteller : Littelfuse |
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IXTH32P20T | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns Mounting: THT Reverse recovery time: 190ns Drain-source voltage: -200V Drain current: -32A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: TrenchP™ Kind of channel: enhancement Gate-source voltage: ±15V Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
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IXTH32P20T | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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![]() |
IXTH32P20T | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns Mounting: THT Reverse recovery time: 190ns Drain-source voltage: -200V Drain current: -32A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: TrenchP™ Kind of channel: enhancement Gate-source voltage: ±15V Case: TO247-3 |
Produkt ist nicht verfügbar |