Produkte > LITTELFUSE INC. > IXTH32P20T
IXTH32P20T

IXTH32P20T Littelfuse Inc.


media?resourcetype=datasheets&itemid=41EE09BF-5ADB-4340-95F0-9B4C12E513EA&filename=Littelfuse-Discrete-MOSFETs-P-Channel-IXT-32P20T-Datasheet.PDF Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 200V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
auf Bestellung 1170 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+9.13 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXTH32P20T Littelfuse Inc.

Description: MOSFET P-CH 200V 32A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V.

Weitere Produktangebote IXTH32P20T

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTH32P20T IXTH32P20T Hersteller : Littelfuse fuse_discrete_mosfets_p-channel_ixt_32p20t_datasheet.pdf.pdf Trans MOSFET P-CH 200V 32A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH32P20T IXTH32P20T Hersteller : IXYS IXT_32P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Mounting: THT
Reverse recovery time: 190ns
Drain-source voltage: -200V
Drain current: -32A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH32P20T IXTH32P20T Hersteller : IXYS media-3320433.pdf MOSFET TrenchP Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH32P20T IXTH32P20T Hersteller : IXYS IXT_32P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Mounting: THT
Reverse recovery time: 190ns
Drain-source voltage: -200V
Drain current: -32A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH