IXTH340N04T4 IXYS
Hersteller: IXYSDescription: MOSFET N-CH 40V 340A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
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Technische Details IXTH340N04T4 IXYS
Description: MOSFET N-CH 40V 340A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 340A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V.
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IXTH340N04T4 | Hersteller : IXYS |
MOSFET 40V/340A TrenchT4 Power MOSFET |
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IXTH340N04T4 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO247-3; 43ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 340A Power dissipation: 480W Case: TO247-3 On-state resistance: 1.9mΩ Mounting: THT Gate charge: 256nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 43ns Features of semiconductor devices: thrench gate power mosfet |
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