auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.62 EUR |
| 10+ | 16.84 EUR |
| 30+ | 16.83 EUR |
| 120+ | 14.01 EUR |
| 270+ | 13.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTH360N055T2 IXYS
Description: MOSFET N-CH 55V 360A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Power Dissipation (Max): 935W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Weitere Produktangebote IXTH360N055T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXTH360N055T2 | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 360A Power dissipation: 935W Case: TO247-3 On-state resistance: 2.4mΩ Mounting: THT Gate charge: 330nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 78ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
IXTH360N055T2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 55V 360A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
|
 |
IXTH360N055T2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 55V 360A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 935W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
IXTH360N055T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 360A Power dissipation: 935W Case: TO247-3 On-state resistance: 2.4mΩ Mounting: THT Gate charge: 330nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 78ns |
Produkt ist nicht verfügbar |