Technische Details IXTH36P15P Littelfuse
Category: THT P channel transistors, Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3, Type of transistor: P-MOSFET, Technology: PolarP™, Polarisation: unipolar, Drain-source voltage: -150V, Drain current: -36A, Power dissipation: 300W, Case: TO247-3, Gate-source voltage: ±20V, On-state resistance: 0.11Ω, Mounting: THT, Gate charge: 55nC, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 228ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTH36P15P
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IXTH36P15P | Hersteller : IXYS |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -36A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 55nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 228ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTH36P15P | Hersteller : IXYS |
Description: MOSFET P-CH 150V 36A TO247 |
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IXTH36P15P | Hersteller : IXYS |
MOSFET PolarP Power MOSFETs |
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IXTH36P15P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -36A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 55nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 228ns |
Produkt ist nicht verfügbar |