IXTH3N100P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1000V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 300+ | 7.63 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
300 Stücke
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Technische Details IXTH3N100P IXYS
Description: MOSFET N-CH 1000V 3A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote IXTH3N100P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXTH3N100P | IXYS |
MOSFETs 3 Amps 1000V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXTH3N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Case: TO247-3 Reverse recovery time: 820ns Power dissipation: 125W Gate charge: 36nC Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 3A Kind of channel: enhancement Drain-source voltage: 1kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTH3N100P |
|
Hersteller: IXYS
MOSFETs 3 Amps 1000V
MOSFETs 3 Amps 1000V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTH3N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO247-3
Reverse recovery time: 820ns
Power dissipation: 125W
Gate charge: 36nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO247-3
Reverse recovery time: 820ns
Power dissipation: 125W
Gate charge: 36nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH