auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 52.69 EUR |
| 10+ | 48.58 EUR |
| 120+ | 40.34 EUR |
| 270+ | 40.09 EUR |
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Technische Details IXTH3N200P3HV IXYS
Description: MOSFET N-CH 2000V 3A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 1.5A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V.
Weitere Produktangebote IXTH3N200P3HV
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Preis |
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IXTH3N200P3HV | Hersteller : Littelfuse |
 POWER MOSFET |
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| IXTH3N200P3HV | Hersteller : IXYS |
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IXTH3N200P3HV | Hersteller : IXYS |
Description: MOSFET N-CH 2000V 3A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 1.5A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 2000 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V |
Produkt ist nicht verfügbar |