IXTH4N100L IXYS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 4A, Power dissipation: 290W, Case: TO247-3, Mounting: THT, Gate charge: 75nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: linear power mosfet, Reverse recovery time: 1.1µs.