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IXTH50P10

IXTH50P10 IXYS

IXT_50P10.pdf
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO247-3
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.24 EUR
Mindestbestellmenge: 8
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Technische Details IXTH50P10 IXYS

Description: MOSFET P-CH 100V 50A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V.

Weitere Produktangebote IXTH50P10 nach Preis ab 8.88 EUR bis 19.5 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTH50P10 IXTH50P10 Hersteller : IXYS Littelfuse_Discrete_MOSFETs_P_Channel_IXT_50P10_Datasheet.PDF MOSFETs -50 Amps -100V 0.055 Rds
auf Bestellung 604 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.45 EUR
10+10.96 EUR
120+10.7 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTH50P10 IXTH50P10 Hersteller : IXYS DS98905EIXTHT50P10.pdf Description: MOSFET P-CH 100V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
auf Bestellung 1046 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.5 EUR
30+11.72 EUR
120+10.02 EUR
510+8.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH