Produkte > IXYS > IXTH52N65X

IXTH52N65X IXYS


littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth52n65x_datasheet.pdf.pdf Hersteller: IXYS
IXTH52N65X THT N channel transistors
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXTH52N65X IXYS

Description: MOSFET N-CH 650V 52A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 26A, 10V, Power Dissipation (Max): 660W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V.

Weitere Produktangebote IXTH52N65X

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTH52N65X IXTH52N65X Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth52n65x_datasheet.pdf.pdf Description: MOSFET N-CH 650V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 26A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH52N65X IXTH52N65X Hersteller : IXYS media-3322266.pdf MOSFETs 650V/9A Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH